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Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.
Amir, Walid; Shin, Ju-Won; Shin, Ki-Yong; Kim, Jae-Moo; Cho, Chu-Young; Park, Kyung-Ho; Hoshi, Takuya; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki; Kim, Tae-Woo.
Affiliation
  • Amir W; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea.
  • Shin JW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea.
  • Shin KY; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea.
  • Kim JM; Korea Advanced Nano Fab Center, Suwon, Gyeonggi­do, 16229, Korea.
  • Cho CY; Korea Advanced Nano Fab Center, Suwon, Gyeonggi­do, 16229, Korea.
  • Park KH; Korea Advanced Nano Fab Center, Suwon, Gyeonggi­do, 16229, Korea.
  • Hoshi T; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243­0198, Japan.
  • Tsutsumi T; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243­0198, Japan.
  • Sugiyama H; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243­0198, Japan.
  • Matsuzaki H; NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243­0198, Japan.
  • Kim TW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea. twkim78@ulsan.ac.kr.
Sci Rep ; 11(1): 23667, 2021 Dec 02.
Article in En | MEDLINE | ID: mdl-34857865
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2021 Document type: Article
Fulltext
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2021 Document type: Article