Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.
Sci Rep
; 11(1): 23667, 2021 Dec 02.
Article
in En
| MEDLINE
| ID: mdl-34857865
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Sci Rep
Year:
2021
Document type:
Article