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Additive-Free, Low-Temperature Crystallization of Stable α-FAPbI3 Perovskite.
Du, Tian; Macdonald, Thomas J; Yang, Ruo Xi; Li, Meng; Jiang, Zhongyao; Mohan, Lokeshwari; Xu, Weidong; Su, Zhenhuang; Gao, Xingyu; Whiteley, Richard; Lin, Chieh-Ting; Min, Ganghong; Haque, Saif A; Durrant, James R; Persson, Kristin A; McLachlan, Martyn A; Briscoe, Joe.
Affiliation
  • Du T; School of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, London, E1 4NS, UK.
  • Macdonald TJ; Department of Materials and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • Yang RX; School of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, London, E1 4NS, UK.
  • Li M; Department of Chemistry and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • Jiang Z; Materials Science Division, Lawrence Berkeley National Lab, 1 Cyclotron Rd. Berkeley, California, 94720, USA.
  • Mohan L; Key Lab for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Application
  • Xu W; Department of Materials and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • Su Z; School of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, London, E1 4NS, UK.
  • Gao X; Department of Materials and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • Whiteley R; Department of Chemistry and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • Lin CT; Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Laboratory, Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, China.
  • Min G; Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Laboratory, Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, China.
  • Haque SA; School of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, London, E1 4NS, UK.
  • Durrant JR; Department of Materials and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • Persson KA; Department of Chemistry and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • McLachlan MA; Department of Chemistry and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
  • Briscoe J; Department of Chemistry and Centre for Processable Electronics, Imperial College, London, W12 0BZ, UK.
Adv Mater ; 34(9): e2107850, 2022 Mar.
Article in En | MEDLINE | ID: mdl-34894160
Formamidinium lead triiodide (FAPbI3 ) is attractive for photovoltaic devices due to its optimal bandgap at around 1.45 eV and improved thermal stability compared with methylammonium-based perovskites. Crystallization of phase-pure α-FAPbI3 conventionally requires high-temperature thermal annealing at 150 °C whilst the obtained α-FAPbI3 is metastable at room temperature. Here, aerosol-assisted crystallization (AAC) is reported, which converts yellow δ-FAPbI3 into black α-FAPbI3 at only 100 °C using precursor solutions containing only lead iodide and formamidinium iodide with no chemical additives. The obtained α-FAPbI3 exhibits remarkably enhanced stability compared to the 150 °C annealed counterparts, in combination with improvements in film crystallinity and photoluminescence yield. Using X-ray diffraction, X-ray scattering, and density functional theory simulation, it is identified that relaxation of residual tensile strains, achieved through the lower annealing temperature and post-crystallization crystal growth during AAC, is the key factor that facilitates the formation of phase-stable α-FAPbI3 . This overcomes the strain-induced lattice expansion that is known to cause the metastability of α-FAPbI3 . Accordingly, pure FAPbI3 p-i-n solar cells are reported, facilitated by the low-temperature (≤100 °C) AAC processing, which demonstrates increases of both power conversion efficiency and operational stability compared to devices fabricated using 150 °C annealed films.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2022 Document type: Article Country of publication: Germany

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2022 Document type: Article Country of publication: Germany