Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping.

ABSTRACT

Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbOxN films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C. N-doping significantly improved the on/off ratio, retention time, and stability of the Pt/NbOxN/Pt devices, thus improving the stability of data storage. The Pt/NbOxN/Pt devices also achieved lower and centralized switching voltage distribution. The improved performance was mainly attributed to the formation of oxygen vacancy (VO) + 2N clusters, which greatly reduced the ionic conductivity and total energy of the system, thus increasing the on/off ratio and stability. Moreover, because of the presence of Vo + 2N clusters, the conductive filaments grew in more localized directions, which led to a concentrated distribution of SET and RESET voltages. Thus, in situ N-doping is a novel and effective approach to optimize device performances for better information storage and logic circuit applications.