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High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness.
Mondal, Praloy; Appani, Shravan K; Sutar, D S; Major, S S.
Affiliation
  • Mondal P; Department of Physics, Indian Institute of Technology Bombay Mumbai 400076 India mondal.praloy0@gmail.com.
  • Appani SK; Department of Physics, Indian Institute of Technology Bombay Mumbai 400076 India mondal.praloy0@gmail.com.
  • Sutar DS; Central Surface Analytical Facility, Indian Institute of Technology Bombay Mumbai 400076 India.
  • Major SS; Department of Physics, Indian Institute of Technology Bombay Mumbai 400076 India mondal.praloy0@gmail.com.
RSC Adv ; 11(32): 19779-19787, 2021 May 27.
Article in En | MEDLINE | ID: mdl-35479208
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: RSC Adv Year: 2021 Document type: Article Country of publication: United kingdom
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: RSC Adv Year: 2021 Document type: Article Country of publication: United kingdom