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ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT.
Chen, Kuan-Yu; Yang, Chih-Chiang; Huang, Chun-Yuan; Su, Yan-Kuin.
Affiliation
  • Chen KY; Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University Tainan 701 Taiwan.
  • Yang CC; Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University Yongkang 710 Taiwan 298r.yang@gmail.com.
  • Huang CY; Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University Yongkang 710 Taiwan 298r.yang@gmail.com.
  • Su YK; Department of Applied Science, National Taitung University Taitung 950 Taiwan laputa@nttu.edu.tw.
RSC Adv ; 10(17): 9902-9906, 2020 Mar 06.
Article in En | MEDLINE | ID: mdl-35498582
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: RSC Adv Year: 2020 Document type: Article Country of publication: United kingdom
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: RSC Adv Year: 2020 Document type: Article Country of publication: United kingdom