Nonvolatile Ferroelectric Memory with Lateral ß/α/ß In2Se3 Heterojunctions.
ACS Appl Mater Interfaces
; 14(22): 25693-25700, 2022 Jun 08.
Article
in En
| MEDLINE
| ID: mdl-35623065
ABSTRACT
The electric dipole locking effect observed in van der Waals (vdW) ferroelectric α-In2Se3 has resulted in a surge of applied research in electronics with nonvolatile functionality. However, ferroelectric tunnel junctions with advantages of lower power consumption and faster writing/reading operations have not been realized in α-In2Se3. Here, we demonstrate the tunneling electroresistance effect in a lateral ß/α/ß In2Se3 heterojunction built by local laser irradiation. Switchable in-plane polarizations of the vdW ferroelectric control the tunneling conductance of the heterojunction device by 4000% of magnitude. The electronic logic bit can be represented and stored with different orientations of electric dipoles. This prototype enables a new approach to rewritable nonvolatile memory with in-plane ferroelectricity in vdW 2D materials.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
ACS Appl Mater Interfaces
Journal subject:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Year:
2022
Document type:
Article
Affiliation country:
China