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Colossal Room-Temperature Terahertz Topological Response in Type-II Weyl Semimetal NbIrTe4.
Zhang, Jiantian; Zhang, Tianning; Yan, Luo; Zhu, Chao; Shen, Wanfu; Hu, Chunguang; Lei, Hongxiang; Luo, Heng; Zhang, Daohua; Liu, Fucai; Liu, Zheng; Tong, Jinchao; Zhou, Liujiang; Yu, Peng; Yang, Guowei.
Affiliation
  • Zhang J; State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
  • Zhang T; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Yan L; School of Physics, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Zhu C; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Shen W; State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China.
  • Hu C; State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China.
  • Lei H; State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
  • Luo H; School of Physics and Electronics, Central South University, Changsha, 410083, P. R. China.
  • Zhang D; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Liu F; School of Physics, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Liu Z; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Tong J; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Zhou L; School of Physics, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Yu P; State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
  • Yang G; State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
Adv Mater ; 34(42): e2204621, 2022 Oct.
Article in En | MEDLINE | ID: mdl-36043902

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2022 Document type: Article Country of publication: Germany

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2022 Document type: Article Country of publication: Germany