Ultra-Thin SnOx Buffer Layer Enables High-Efficiency Quantum Junction Photovoltaics.
Adv Sci (Weinh)
; 9(36): e2204725, 2022 Dec.
Article
in En
| MEDLINE
| ID: mdl-36285698
ABSTRACT
Solution-processed solar cells are promising for the cost-effective, high-throughput production of photovoltaic devices. Colloidal quantum dots (CQDs) are attractive candidate materials for efficient, solution-processed solar cells, potentially realizing the broad-spectrum light utilization and multi-exciton generation effect for the future efficiency breakthrough of solar cells. The emerging quantum junction solar cells (QJSCs), constructed by n- and p-type CQDs only, open novel avenue for all-quantum-dot photovoltaics with a simplified device configuration and convenient processing technology. However, the development of high-efficiency QJSCs still faces the challenge of back carrier diffusion induced by the huge carrier density drop at the interface of CQDs and conductive glass substrate. Herein, an ultra-thin atomic layer deposited tin oxide (SnOx ) layer is employed to buffer this carrier density drop, significantly reducing the interfacial recombination and capacitance caused by the back carrier diffusion. The SnOx -modified QJSC achieves a record-high efficiency of 11.55% and a suppressed hysteresis factor of 0.04 in contrast with reference QJSC with an efficiency of 10.4% and hysteresis factor of 0.48. This work clarifies the critical effect of interfacial issues on the carrier recombination and hysteresis of QJSCs, and provides an effective pathway to design high-performance all-quantum-dot devices.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Adv Sci (Weinh)
Year:
2022
Document type:
Article
Publication country:
ALEMANHA
/
ALEMANIA
/
DE
/
DEUSTCHLAND
/
GERMANY