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Strain Tunable Thermoelectric Material: Janus ZrSSe Monolayer.
Huang, Si-Zhao; Fang, Cheng-Ge; Feng, Qing-Yi; Wang, Bi-Yi; Yang, Hong-Dong; Li, Bo; Xiang, Xia; Zu, Xiao-Tao; Deng, Hong-Xiang.
Affiliation
  • Huang SZ; School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Fang CG; China Academy of Launch Vehicle Technology, Beijing 10076, China.
  • Feng QY; School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Wang BY; Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China.
  • Yang HD; Shanghai Institute of Space Power-Sources, Shanghai 200245, China.
  • Li B; School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Xiang X; School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Zu XT; School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Deng HX; School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
Langmuir ; 39(7): 2719-2728, 2023 Feb 21.
Article in En | MEDLINE | ID: mdl-36753560
ABSTRACT
Thermoelectric (TE) performance of the Janus ZrSSe monolayer under biaxial strain is systematically explored by the first-principles approach and Boltzmann transport theory. Our results show that the Janus ZrSSe monolayer has excellent chemical, dynamical, thermal, and mechanical stabilities, which provide a reliable platform for strain tuning. The electronic structure and TE transport parameters of the Janus ZrSSe monolayer can be obviously tuned by biaxial strain. Under 2% tensile strain, the optimal power factor PF of the n-type-doped Janus ZrSSe monolayer reaches 46.36 m W m-1 K-2 at 300 K. This value is higher than that of the most classical TE materials. Under 6% tensile strain, the maximum ZT values for the p-type- and n-type-doped Janus ZrSSe monolayers are 4.41 and 4.88, respectively, which are about 3.83 and 1.49 times the results of no strain, respectively. Such high TE performance can be attributed to high band degeneracy and short phonon relaxation time under strain, causing simultaneous increase of the Seebeck coefficient and suppression of the phonon thermal transport. Present work demonstrates that the Janus ZrSSe monolayer is a promising candidate as a strain-tunable TE material and stimulates further experimental synthesis.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Langmuir Journal subject: QUIMICA Year: 2023 Document type: Article Affiliation country: China

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Langmuir Journal subject: QUIMICA Year: 2023 Document type: Article Affiliation country: China
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