Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell.
Nanotechnology
; 34(26)2023 Apr 12.
Article
in En
| MEDLINE
| ID: mdl-36975178
ABSTRACT
The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111)Bsubstrate and the resistance of InAs/GaSb core-shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanotechnology
Year:
2023
Document type:
Article
Affiliation country:
France
Publication country:
ENGLAND
/
ESCOCIA
/
GB
/
GREAT BRITAIN
/
INGLATERRA
/
REINO UNIDO
/
SCOTLAND
/
UK
/
UNITED KINGDOM