Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits.

ABSTRACT

We live in a technologically advanced society where we all use semiconductor chips in the majority of our gadgets, and the basic criterion concerning data storage and memory is a small footprint and low power consumption. SRAM is a very important part of this and can be used to meet all the above criteria. In this study, LTSpice software is used to come up with a high-performance sense amplifier circuit for low-power SRAM applications. Throughout this research, various power reduction approaches were explored, and the optimal solution has been implemented in our own modified SRAM design. In this article, the effect of power consumption and the reaction time of the suggested sense amplifier were also examined by adjusting the width-to-length (W/L) ratio of the transistor, the power supply, and the nanoscale technology. The exact amount of power used and the number of transistors required by different approaches to better comprehend the ideal technique are also provided. Our proposed design of a low-power sense amplifier has shown promising results, and we employ three variations of VLSI power reduction techniques to improve efficiency. Low-power SRAMs embrace the future of memory-centric neuromorphic computing applications.