Exploring the resonance absorption of subwavelength-patterned epitaxial-grown group-IV semiconductor composite structures.

We experimentally and theoretically demonstrate a mid-infrared perfect absorber with all group-IV epitaxial layered composite structures. The multispectral narrowband strong absorption (>98%) is attributed to the combined effects of the asymmetric Fabry-Perot (FP) interference and the plasmonic resonance in the subwavelength-patterned metal-dielectric-metal (MDM) stack. The spectral position and intensity of the absorption resonance were analyzed by reflection and transmission. While a localized plasmon resonance in the dual-metal region was found to be modulated by both the horizontal (ribbon width) and vertical (spacer layer thickness) profile, the asymmetric FP modes were modulated merely by the vertical geometric parameters. Semi-empirical calculations show strong coupling between modes with a large Rabi-splitting energy reaching 46% of the mean energy of the plasmonic mode under proper horizontal profile. A wavelength-adjustable all-group-IV-semiconductor plasmonic perfect absorber has potential for photonic-electronic integration.