Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C.
Opt Express
; 31(15): 24173-24182, 2023 Jul 17.
Article
in En
| MEDLINE
| ID: mdl-37475250
ABSTRACT
Direct epitaxial growth of group III-V light sources with excellently thermal performance on silicon photonics chips promises low-cost, low-power-consumption, high-performance photonic integrated circuits. Here, we report on the achievement of ultra-high thermal stability 1.3â
µm InAs/GaAs quantum dot (QD) lasers directly grown on an on-axis Si (001) with a record-high continuous-wave (CW) operating temperature of 150 °C. A GaAs buffer layer with a low threading dislocation density (TDD) of 4.3 × 106â
cm-2 was first deposited using an optimized three-step growth method by molecular beam epitaxy. Then, an eight-layer QD laser structure with p-type modulation doping to enhance the temperature stability of the device was subsequently grown on the low TDD Si-based GaAs buffer layer. It is shown that the QD laser exhibits the ultra-high temperature stability with a characteristic temperature T0=∞ and T1=∞ in the wide temperature range of 10-75 °C and 10-140 °C, respectively. Moreover, a maximum CW operating temperature of up to 150 °C and a pulsed operating temperature of up to 160 °C are achieved for the QD laser. In addition, the QD laser shows a high CW saturation power of 50â
mW at 85 °C and 19â
mW at 125 °C, respectively.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Opt Express
Journal subject:
OFTALMOLOGIA
Year:
2023
Document type:
Article