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The Influence of Capping Layers on Tunneling Magnetoresistance and Microstructure in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions upon Annealing.
Kim, Geunwoo; Lee, Soogil; Lee, Sanghwa; Song, Byonggwon; Lee, Byung-Kyu; Lee, Duhyun; Lee, Jin Seo; Lee, Min Hyeok; Kim, Young Keun; Park, Byong-Guk.
Affiliation
  • Kim G; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea.
  • Lee S; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea.
  • Lee S; Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea.
  • Song B; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea.
  • Lee BK; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 16678, Republic of Korea.
  • Lee D; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 16678, Republic of Korea.
  • Lee JS; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 16678, Republic of Korea.
  • Lee MH; Department of Semiconductor Systems Engineering, Korea University, Seoul 02481, Republic of Korea.
  • Kim YK; Department of Materials Science and Engineering, Korea University, Seoul 02481, Republic of Korea.
  • Park BG; Department of Materials Science and Engineering, Korea University, Seoul 02481, Republic of Korea.
Nanomaterials (Basel) ; 13(18)2023 Sep 19.
Article in En | MEDLINE | ID: mdl-37764621
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2023 Document type: Article
Fulltext
Add to My VHL
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XML
PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2023 Document type: Article