Your browser doesn't support javascript.
loading
Preparation of Hybrid Films Based in Aluminum 8-Hydroxyquinoline as Organic Semiconductor for Photoconductor Applications.
Sánchez Vergara, María Elena; Cantera Cantera, Luis Alberto; Rios, Citlalli; Salcedo, Roberto; Lozada Flores, Octavio; Dutt, Ateet.
Affiliation
  • Sánchez Vergara ME; Facultad de Ingeniería, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Huixquilucan 52786, Estado de México, Mexico.
  • Cantera Cantera LA; Facultad de Ingeniería, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Huixquilucan 52786, Estado de México, Mexico.
  • Rios C; Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito Exterior s/n. C.U., Mexico City 04510, Mexico.
  • Salcedo R; Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito Exterior s/n. C.U., Mexico City 04510, Mexico.
  • Lozada Flores O; Facultad de Ingeniería, Universidad Panamericana, Augusto Rodin 498, Insurgentes Mixcoac, Mexico City 03920, Mexico.
  • Dutt A; Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Circuito Exterior s/n. C.U., Mexico City 04510, Mexico.
Sensors (Basel) ; 23(18)2023 Sep 06.
Article in En | MEDLINE | ID: mdl-37765766
In the present work, we have investigated an organic semiconductor based on tris(8-hydroxyquinoline) aluminum (AlQ3) doped with tetracyanoquinodimethane (TCNQ), which can be used as an organic photoconductor. DFT calculations were carried out to optimize the structure of semiconductor species and to obtain related constants in order to compare experimental and theoretical results. Subsequently, AlQ3-TCNQ films with polypyrrole (Ppy) matrix were fabricated, and they were morphologically and mechanically characterized by Scanning Electron Microscopy, X-ray diffraction and Atomic Force Microscopy techniques. The maximum stress for the film is 8.66 MPa, and the Knoop hardness is 0.0311. The optical behavior of the film was also analyzed, and the optical properties were found to exhibit two indirect transitions at 2.58 and 3.06 eV. Additionally, photoluminescence measurements were carried out and the film showed an intense visible emission in the visible region. Finally, a photoconductor was fabricated and electrically characterized. Applying a cubic spline approximation to fit cubic polynomials to the J-V curves, the ohmic to SCLC transition voltage VON and the trap-filled-limit voltage VTFL for the device were obtained. Then, the free carrier density and trap density for the device were approximated to n0=4.4586×10191m3 and Nt=3.1333×10311m3, respectively.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sensors (Basel) Year: 2023 Document type: Article Affiliation country: Mexico Country of publication: Switzerland

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sensors (Basel) Year: 2023 Document type: Article Affiliation country: Mexico Country of publication: Switzerland