Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials. | Small;: e2304445, 2023 Oct 29. | MEDLINE

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Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials.

Chen, Ruo-Si; Lu, Yuerui.

Affiliation

Chen RS; School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia.
Lu Y; School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia.

Small ; : e2304445, 2023 Oct 29.

Article in En | MEDLINE | ID: mdl-37899295

Key words

2D NC FETs; 2D ferroelectric materials; ferroelectric gate stack; negative capacitance; subthreshold swing

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Small Journal subject: ENGENHARIA BIOMEDICA Year: 2023 Document type: Article Affiliation country: Australia

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Small Journal subject: ENGENHARIA BIOMEDICA Year: 2023 Document type: Article Affiliation country: Australia