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Brain-Inspired Reservoir Computing Using Memristors with Tunable Dynamics and Short-Term Plasticity.
Armendarez, Nicholas X; Mohamed, Ahmed S; Dhungel, Anurag; Hossain, Md Razuan; Hasan, Md Sakib; Najem, Joseph S.
Affiliation
  • Armendarez NX; Department of Mechanical Engineering, The Pennsylvania State University, 336 Reber Building, University Park, Pennsylvania 16802, United States.
  • Mohamed AS; Department of Mechanical Engineering, The Pennsylvania State University, 336 Reber Building, University Park, Pennsylvania 16802, United States.
  • Dhungel A; Department of Electrical and Computer Engineering, The University of Mississippi, 310 Anderson Hall, University, Mississippi 38677, United States.
  • Hossain MR; Department of Electrical and Computer Engineering, The University of Mississippi, 310 Anderson Hall, University, Mississippi 38677, United States.
  • Hasan MS; Department of Electrical and Computer Engineering, The University of Mississippi, 310 Anderson Hall, University, Mississippi 38677, United States.
  • Najem JS; Department of Mechanical Engineering, The Pennsylvania State University, 336 Reber Building, University Park, Pennsylvania 16802, United States.
ACS Appl Mater Interfaces ; 16(5): 6176-6188, 2024 Feb 07.
Article in En | MEDLINE | ID: mdl-38271202
ABSTRACT
Recent advancements in reservoir computing (RC) research have created a demand for analogue devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy and occupying a smaller area footprint. Studies have demonstrated that dynamic memristors, with nonlinear and short-term memory dynamics, are excellent candidates as information-processing devices or reservoirs for temporal classification and prediction tasks. Previous implementations relied on nominally identical memristors that applied the same nonlinear transformation to the input data, which is not enough to achieve a rich state space. To address this limitation, researchers either diversified the data encoding across multiple memristors or harnessed the stochastic device-to-device variability among the memristors. However, this approach requires additional preprocessing steps and leads to synchronization issues. Instead, it is preferable to encode the data once and pass them through a reservoir layer consisting of memristors with distinct dynamics. Here, we demonstrate that ion-channel-based memristors with voltage-dependent dynamics can be controllably and predictively tuned through the voltage or adjustment of the ion channel concentration to exhibit diverse dynamic properties. We show, through experiments and simulations, that reservoir layers constructed with a small number of distinct memristors exhibit significantly higher predictive and classification accuracies with a single data encoding. We found that for a second-order nonlinear dynamical system prediction task, the varied memristor reservoir experimentally achieved an impressive normalized mean square error of 1.5 × 10-3, using only five distinct memristors. Moreover, in a neural activity classification task, a reservoir of just three distinct memristors experimentally attained an accuracy of 96.5%. This work lays the foundation for next-generation physical RC systems that can exploit the complex dynamics of their diverse building blocks to achieve increased signal processing capabilities.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2024 Document type: Article Affiliation country: United States Country of publication: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2024 Document type: Article Affiliation country: United States Country of publication: United States