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Stable and efficient pure blue quantum-dot LEDs enabled by inserting an anti-oxidation layer.
Zhang, Wenjing; Li, Bo; Chang, Chun; Chen, Fei; Zhang, Qin; Lin, Qingli; Wang, Lei; Yan, Jinhang; Wang, Fangfang; Chong, Yihua; Du, Zuliang; Fan, Fengjia; Shen, Huaibin.
Affiliation
  • Zhang W; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
  • Li B; Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, China.
  • Chang C; Key Laboratory of Nondestructive Testing Ministry of Education, Nanchang Hangkong University, 330063, Nanchang, China.
  • Chen F; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China. chenfei.henu@henu.edu.cn.
  • Zhang Q; Key Laboratory of Nondestructive Testing Ministry of Education, Nanchang Hangkong University, 330063, Nanchang, China.
  • Lin Q; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
  • Wang L; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
  • Yan J; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
  • Wang F; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
  • Chong Y; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
  • Du Z; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
  • Fan F; Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, China. ffj@u
  • Shen H; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China. shenhuaibin@henu.edu.cn.
Nat Commun ; 15(1): 783, 2024 Jan 26.
Article in En | MEDLINE | ID: mdl-38278797
ABSTRACT
The efficiency and stability of red and green quantum-dot light-emitting diodes have already met the requirements for commercialization in displays. However, the poor stability of the blue ones, particularly pure blue color, is hindering the commercialization of full-color quantum-dot light-emitting diode technology. Severe hole accumulation at the blue quantum-dot/hole-transport layer interface makes the hole-transport layer prone to oxidation, limiting the device operational lifetime. Here, we propose inserting an anti-oxidation layer (poly(p-phenylene benzobisoxazole)) between this interface to take in some holes from the hole-transport layer, which mitigates the oxidation-induced device degradation, enabling a T50 (time for the luminance decreasing by 50%) of more than 41,000 h with an initial brightness of 100 cd m-2 in pure blue devices. Meanwhile, the inserted transition layer facilitates hole injection and helps reduce electron leakage, leading to a peak external quantum efficiency of 23%.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2024 Document type: Article Affiliation country: China

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2024 Document type: Article Affiliation country: China