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All laser direct writing process for temperature sensor based on graphene and silver.
Li, Qi; Bai, Ruijie; Guo, Lianbo; Gao, Yang.
Affiliation
  • Li Q; Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, China.
  • Bai R; North Automatic Control Technology Institute, Taiyuan, 030006, China.
  • Guo L; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science & Technology, Wuhan, 430074, China. lbguo@hust.edu.cn.
  • Gao Y; Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, China. yanggao@ecust.edu.cn.
Front Optoelectron ; 17(1): 5, 2024 Feb 05.
Article in En | MEDLINE | ID: mdl-38311649
ABSTRACT
A highly sensitive temperature sensing array is prepared by all laser direct writing (LDW) method, using laser induced silver (LIS) as electrodes and laser induced graphene (LIG) as temperature sensing layer. A finite element analysis (FEA) photothermal model incorporating a phase transition mechanism is developed to investigate the relationship between laser parameters and LIG properties, providing guidance for laser processing parameters selection with laser power of 1-5 W and laser scanning speed (greater than 50 mm/s). The deviation of simulation and experimental data for widths and thickness of LIG are less than 5% and 9%, respectively. The electrical properties and temperature responsiveness of LIG are also studied. By changing the laser process parameters, the thickness of the LIG ablation grooves can be in the range of 30-120 µm and the resistivity of LIG can be regulated within the range of 0.031-67.2 Ω·m. The percentage temperature coefficient of resistance (TCR) is calculated as - 0.58%/°C. Furthermore, the FEA photothermal model is studied through experiments and simulations data regarding LIS, and the average deviation between experiment and simulation is less than 5%. The LIS sensing samples have a thickness of about 14 µm, an electrical resistivity of 0.0001-100 Ω·m is insensitive to temperature and pressure stimuli. Moreover, for a LIS-LIG based temperature sensing array, a correction factor is introduced to compensate for the LIG temperature sensing being disturbed by pressure stimuli, the temperature measurement difference is decreased from 11.2 to 2.6 °C, indicating good accuracy for temperature measurement.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Front Optoelectron Year: 2024 Document type: Article Affiliation country: China Country of publication:

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Front Optoelectron Year: 2024 Document type: Article Affiliation country: China Country of publication: