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Highly Sensitive Broadband Polarized Photodetector Based on the As0.6P0.4/WSe2 Heterostructure toward Imaging and Optical Communication Application.
Li, Sina; Chen, Yang; Zhang, Jielian; Zhou, Junjie; Yang, Sixian; Liu, Yue; Xiong, Jingxian; Liu, Xinke; Li, Jingbo; Huo, Nengjie.
Affiliation
  • Li S; School of Semiconductor Science and Technology, South China Normal University, Foshan 528000, P. R. China.
  • Chen Y; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, P. R. China.
  • Zhang J; School of Semiconductor Science and Technology, South China Normal University, Foshan 528000, P. R. China.
  • Zhou J; School of Semiconductor Science and Technology, South China Normal University, Foshan 528000, P. R. China.
  • Yang S; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, P. R. China.
  • Liu Y; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
  • Xiong J; School of Semiconductor Science and Technology, South China Normal University, Foshan 528000, P. R. China.
  • Liu X; Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, P. R. China.
  • Li J; School of Semiconductor Science and Technology, South China Normal University, Foshan 528000, P. R. China.
  • Huo N; Frontier Interdisciplinary College, National University of Defense Technology, Changsha 410000, P. R. China.
ACS Appl Mater Interfaces ; 16(10): 12805-12812, 2024 Mar 13.
Article in En | MEDLINE | ID: mdl-38422468
ABSTRACT
Polarization-sensitive photodetectors based on two-dimensional anisotropic materials still encounter the issues of narrow spectral coverage and low polarization sensitivity. To address these obstacles, anisotropic As0.6P0.4 with a narrow band gap has been integrated with WSe2 to construct a type-II heterostructure, realizing a high-performance polarization-sensitive photodetector with broad spectral range from 405 to 2200 nm. By operating in photovoltaic mode at zero bias, the device shows a very low dark current of ∼0.02 picoampere, high responsivity of 492 m A/W, and high photoswitching ratio of 6 × 104, yielding a high specific detectivity of 1.4 × 1012 Jones. The strong in-plane anisotropy of As0.6P0.4 endows the device with a capability of polarization-sensitive detection with a high polarization ratio of 6.85 under a bias voltage. As an image sensor and signal receiver, the device shows great potential in imaging and optical communication applications. This work develops an anisotropic vdW heterojunction to realize polarization-sensitive photodetectors with wide spectral coverage, fast response, and high sensitivity, providing a new candidate for potential applications of polarization-resolved electronics and photonics.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2024 Document type: Article Country of publication: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2024 Document type: Article Country of publication: United States