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Engineering Oxide Epitaxy beyond Substrate Constraint.
Cheng, Mingqiang; Li, Changjian; Wang, Qiangli; Ding, Lingtong; Wang, Xiao; Zhong, Gaokuo; Li, Jiangyu.
Affiliation
  • Cheng M; Harbin Institute of Technology, Harbin, Heilongjiang 150001, China.
  • Li C; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
  • Wang Q; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
  • Ding L; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
  • Wang X; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
  • Zhong G; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
  • Li J; Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, China.
Nano Lett ; 24(26): 8171-8178, 2024 Jul 03.
Article in En | MEDLINE | ID: mdl-38912705
ABSTRACT
Orientation engineering is a crucial aspect of thin film growth, and it is rather challenging to engineer film epitaxy beyond the substrate constraint. Guided by density functional theory calculations, we use SrRuO3 (SRO) as a buffer layer and successfully deposit [111]-oriented CoFe2O4 (CFO) on [001]-, [110]-, and [111]-oriented SrTiO3 (STO) substrates. This enables subsequent growth of [111]-oriented functional oxides, such as PbTiO3 (PTO), overcoming the constraint of the substrate. This strategy is quite general and applicable to lanthanum aluminate and yttria-stabilized zirconia substrates as well. X-ray Φ scans and atomic resolution aberration-corrected scanning transmission electron microscopy (AC-STEM) reveal detailed epitaxial relations in each of the cases, with four variants of [111]-CFO found on [001]-STO and two variants found on [110]-STO, formed to mitigate the large lattice misfit strain between the film and substrate. Our strategy thus provides a general pathway for orientation engineering of oxide epitaxy beyond substrate constraint.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2024 Document type: Article Affiliation country: China Country of publication: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2024 Document type: Article Affiliation country: China Country of publication: United States