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High-temperature quantum valley Hall effect with quantized resistance and a topological switch.
Huang, Ke; Fu, Hailong; Watanabe, Kenji; Taniguchi, Takashi; Zhu, Jun.
Affiliation
  • Huang K; Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA.
  • Fu H; Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA.
  • Watanabe K; Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Taniguchi T; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Zhu J; Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA.
Science ; 385(6709): 657-661, 2024 Aug 09.
Article in En | MEDLINE | ID: mdl-39024378
ABSTRACT
Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states-a manifestation of the quantum valley Hall effect in Bernal bilayer graphene-quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Science Year: 2024 Document type: Article Affiliation country: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Science Year: 2024 Document type: Article Affiliation country: United States