Spin injection in the nonlinear regime: band bending effects.
Phys Rev Lett
; 92(22): 226602, 2004 Jun 04.
Article
en En
| MEDLINE
| ID: mdl-15245248
ABSTRACT
We report on electrical spin-injection measurements into a nonmagnetic semiconductor in the nonlinear regime. For voltage drops across the interface larger than a few mV the spin-injection efficiency decreases strongly. The effect is caused by repopulation of the minority spin level in the magnetic semiconductor due to band bending at the interface.
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01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2004
Tipo del documento:
Article
País de afiliación:
Alemania