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Electron transport via local polarons at interface atoms.
Berthe, M; Urbieta, A; Perdigão, L; Grandidier, B; Deresmes, D; Delerue, C; Stiévenard, D; Rurali, R; Lorente, N; Magaud, L; Ordejón, P.
Afiliación
  • Berthe M; Institut d'Electronique, de Microélectronique, et de Nanotechnologie, IEMN ,CNRS, UMR 8520, Département ISEN, 59046 Lille Cédex, France.
Phys Rev Lett ; 97(20): 206801, 2006 Nov 17.
Article en En | MEDLINE | ID: mdl-17155701
ABSTRACT
Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-square root 3 x square root 3 R 30 degrees surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process.
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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2006 Tipo del documento: Article País de afiliación: Francia
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2006 Tipo del documento: Article País de afiliación: Francia