Carrier diffusion measurements in InSb by the angular dependence of degenerate four-wave mixing.
Opt Lett
; 10(4): 187-9, 1985 Apr 01.
Article
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| MEDLINE
| ID: mdl-19724389
ABSTRACT
Studies of the angular dependence of cw degenerate four-wave mixing in n-type InSb have yielded a value for the diffusion length, l(D), of 60 +/- 2 microm. From this, the dependence of l(D) on photoexcited carrier concentration is calculated. A simple model has been developed to estimate the corresponding parallel-processing capabilities of semi-conductor-based, all-optical, parallel-processing digital computing systems.
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Opt Lett
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1985
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Article