Nonlocal activation of a bistable atom through a surface state charge-transfer process on Si(100)-(2×1):H.
Phys Rev Lett
; 105(4): 048302, 2010 Jul 23.
Article
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| MEDLINE
| ID: mdl-20867890
ABSTRACT
The reversible hopping of a bistable atom on the Si(100)-(2×1)H surface is activated nonlocally by hole injection into Si-Si bond surface states with a low temperature (5 K) scanning tunneling microscope. In the contact region, at short distances (<1.5 nm) between the hole injection site and the bistable atom, the hopping yield of the bistable atom exhibits remarkable variations as a function of the hole injection site. It is explained by the density of state distribution along the silicon bond network that shows charge-transfer pathways between the injection sites and the bistable atom.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2010
Tipo del documento:
Article
País de afiliación:
Francia