Optical imaging of electrical carrier injection into individual InAs quantum dots.
Phys Rev Lett
; 105(25): 257401, 2010 Dec 17.
Article
en En
| MEDLINE
| ID: mdl-21231625
ABSTRACT
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of carrier injection into a single QD. Tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to a spectrum of sharp EL lines from a small number of bright spots on the diode surface, characteristic of emission from individual QDs. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential tunneling paths for carriers.
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01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2010
Tipo del documento:
Article
País de afiliación:
Reino Unido