Self-aligned coupled nanowire transistor.
ACS Nano
; 5(9): 6910-5, 2011 Sep 27.
Article
en En
| MEDLINE
| ID: mdl-21815650
The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Nano
Año:
2011
Tipo del documento:
Article
Pais de publicación:
Estados Unidos