Integer quantum Hall effect in trilayer graphene.
Phys Rev Lett
; 107(12): 126806, 2011 Sep 16.
Article
en En
| MEDLINE
| ID: mdl-22026788
ABSTRACT
By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2011
Tipo del documento:
Article
País de afiliación:
Francia