Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography.
Nanotechnology
; 23(12): 125302, 2012 Mar 30.
Article
en En
| MEDLINE
| ID: mdl-22414820
ABSTRACT
The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2012
Tipo del documento:
Article
País de afiliación:
Alemania