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Quantum oscillations and high carrier mobility in the delafossite PdCoO(2).
Hicks, Clifford W; Gibbs, Alexandra S; Mackenzie, Andrew P; Takatsu, Hiroshi; Maeno, Yoshiteru; Yelland, Edward A.
Afiliación
  • Hicks CW; Scottish Universities Physics Alliance, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS, United Kingdom.
Phys Rev Lett ; 109(11): 116401, 2012 Sep 14.
Article en En | MEDLINE | ID: mdl-23005653
ABSTRACT
We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO(2). At 295 K we measure an in-plane resistivity of 2.6 µΩ cm, making PdCoO(2) the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T(5) temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 µm, approximately 10(5) lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2012 Tipo del documento: Article País de afiliación: Reino Unido
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2012 Tipo del documento: Article País de afiliación: Reino Unido