Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching.
Nanoscale Res Lett
; 8(1): 216, 2013 May 07.
Article
en En
| MEDLINE
| ID: mdl-23651912
ABSTRACT
Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-µm-long nanowires was much higher than the theoretical absorptance of a 10-µm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nanoscale Res Lett
Año:
2013
Tipo del documento:
Article
País de afiliación:
Japón
Pais de publicación:
EEUU
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ESTADOS UNIDOS
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ESTADOS UNIDOS DA AMERICA
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EUA
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UNITED STATES
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UNITED STATES OF AMERICA
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US
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USA