Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy.
Phys Rev Lett
; 110(22): 227402, 2013 May 31.
Article
en En
| MEDLINE
| ID: mdl-23767746
ABSTRACT
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E(2g) phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
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Colección:
01-internacional
Base de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Año:
2013
Tipo del documento:
Article
País de afiliación:
Estados Unidos