Your browser doesn't support javascript.
loading
Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As.
Fujii, J; Salles, B R; Sperl, M; Ueda, S; Kobata, M; Kobayashi, K; Yamashita, Y; Torelli, P; Utz, M; Fadley, C S; Gray, A X; Braun, J; Ebert, H; Di Marco, I; Eriksson, O; Thunström, P; Fecher, G H; Stryhanyuk, H; Ikenaga, E; Minár, J; Back, C H; van der Laan, G; Panaccione, G.
Afiliación
  • Fujii J; Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy.
Phys Rev Lett ; 111(9): 097201, 2013 Aug 30.
Article en En | MEDLINE | ID: mdl-24033065
ABSTRACT
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2013 Tipo del documento: Article País de afiliación: Italia
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2013 Tipo del documento: Article País de afiliación: Italia