Interfacial structure and chemistry of GaN on Ge(111).

Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R; Barnard, Jonathan S; Humphreys, Colin J

Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R; Barnard, Jonathan S; Humphreys, Colin J.

Afiliación

Zhang S; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, United Kingdom.
Zhang Y; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, United Kingdom and Electron Microscopy Center, EMPA, Dübendorf CH-8600, Switzerland.
Cui Y; Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf, Germany.
Freysoldt C; Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf, Germany.
Neugebauer J; Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf, Germany.
Lieten RR; IMEC, KU Leuven, Kapeldreef 75, 3001 Heverlee, Belgium.
Barnard JS; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, United Kingdom.
Humphreys CJ; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, United Kingdom.

Phys Rev Lett ; 111(25): 256101, 2013 Dec 20.

Article en En | MEDLINE | ID: mdl-24483749

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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2013 Tipo del documento: Article País de afiliación: Reino Unido

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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2013 Tipo del documento: Article País de afiliación: Reino Unido