Enhanced device performance of germanium nanowire junctionless (GeNW-JL) MOSFETs by germanide contact formation with Ar plasma treatment.

Yoon, Young Gwang; Kim, Tae Kyun; Hwang, In-Chan; Lee, Hyun-Seung; Hwang, Byeong-Woon; Moon, Jung-Min; Seo, Yu-Jin; Lee, Suk Won; Jo, Moon-Ho; Lee, Seok-Hee

Yoon, Young Gwang; Kim, Tae Kyun; Hwang, In-Chan; Lee, Hyun-Seung; Hwang, Byeong-Woon; Moon, Jung-Min; Seo, Yu-Jin; Lee, Suk Won; Jo, Moon-Ho; Lee, Seok-Hee.

Afiliación

Yoon YG; Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea.

ACS Appl Mater Interfaces ; 6(5): 3150-5, 2014 Mar 12.

Article en En | MEDLINE | ID: mdl-24547762

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2014 Tipo del documento: Article Pais de publicación: Estados Unidos

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