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Doping a correlated band insulator: a new route to half-metallic behavior.
Garg, Arti; Krishnamurthy, H R; Randeria, Mohit.
Afiliación
  • Garg A; Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064, India.
  • Krishnamurthy HR; Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560 012, India and JNCASR, Jakkur, Bangalore 560 064, India.
  • Randeria M; Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
Phys Rev Lett ; 112(10): 106406, 2014 Mar 14.
Article en En | MEDLINE | ID: mdl-24679315
ABSTRACT
We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value UAF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of UAF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.
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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2014 Tipo del documento: Article País de afiliación: India
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2014 Tipo del documento: Article País de afiliación: India