The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery.
Appl Radiat Isot
; 90: 165-9, 2014 Aug.
Article
en En
| MEDLINE
| ID: mdl-24751350
ABSTRACT
A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Appl Radiat Isot
Asunto de la revista:
MEDICINA NUCLEAR
/
SAUDE AMBIENTAL
Año:
2014
Tipo del documento:
Article
País de afiliación:
China