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Filament theory based WORM memory devices using aluminum/poly(9-vinylcarbazole)/aluminum structures.
Suresh, Aswin; Krishnakumar, Govind; Namboothiry, Manoj A G.
Afiliación
  • Suresh A; School of Physics, Indian Institute of Science Education and Research, Thiruvananthapuram, CET Campus, Thiruvananthapuram-695016, Kerala, India. manoj@iisertvm.ac.in.
Phys Chem Chem Phys ; 16(26): 13074-7, 2014 Jul 14.
Article en En | MEDLINE | ID: mdl-24888392
Spin coated poly(N-vinylcarbazole) (PVK) sandwiched between thermally evaporated aluminum (Al) electrodes on a glass substrate showed unipolar Write Once Read Many times (WORM) characteristics. The pristine devices were in the low resistance ON state exhibiting ohmic behavior and at a voltage near -2 V, they switched abruptly to the high resistance OFF state showing space charge limited current (SCLC). We suggest that the rupturing of metallic filaments due to Joule heating may explain the effect. The WORM devices exhibited an ON/OFF ratio of 10(8), a retention of 1000 s and an endurance of ∼10(6) cycles in both ON and OFF states.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2014 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2014 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido