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High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability.
Yang, Weihuang; Li, Jinchai; Zhang, Yong; Huang, Po-Kai; Lu, Tien-Chang; Kuo, Hao-Chung; Li, Shuping; Yang, Xu; Chen, Hangyang; Liu, Dayi; Kang, Junyong.
Afiliación
  • Yang W; Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
  • Li J; Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
  • Zhang Y; Department of Electrical and Computer Engineering and Center for Optoelectronics, University of North Carolina at Charlotte, Charlotte, NC, 28223 (USA).
  • Huang PK; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, 30050 (China).
  • Lu TC; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, 30050 (China).
  • Kuo HC; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, 30050 (China).
  • Li S; Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
  • Yang X; Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
  • Chen H; Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
  • Liu D; Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
  • Kang J; Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
Sci Rep ; 4: 5166, 2014 Jun 05.
Article en En | MEDLINE | ID: mdl-24898569
ABSTRACT
High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(-2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2014 Tipo del documento: Article Pais de publicación: ENGLAND / ESCOCIA / GB / GREAT BRITAIN / INGLATERRA / REINO UNIDO / SCOTLAND / UK / UNITED KINGDOM
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2014 Tipo del documento: Article Pais de publicación: ENGLAND / ESCOCIA / GB / GREAT BRITAIN / INGLATERRA / REINO UNIDO / SCOTLAND / UK / UNITED KINGDOM