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A CMOS smart temperature and humidity sensor with combined readout.
Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas.
Afiliación
  • Eder C; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. c.eder@ucl.ac.uk.
  • Valente V; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. v.valente@ucl.ac.uk.
  • Donaldson N; Department of Medical Physics and Bioengineering, University College London, Malet Place, WC1E 6BT, UK. n.donaldson@ucl.ac.uk.
  • Demosthenous A; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. a.demosthenous@ucl.ac.uk.
Sensors (Basel) ; 14(9): 17192-211, 2014 Sep 16.
Article en En | MEDLINE | ID: mdl-25230305
ABSTRACT
A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 µm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 µA.
Asunto(s)

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Semiconductores / Transductores / Procesamiento de Señales Asistido por Computador / Agua / Termografía / Embalaje de Productos / Humedad Idioma: En Revista: Sensors (Basel) Año: 2014 Tipo del documento: Article País de afiliación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Semiconductores / Transductores / Procesamiento de Señales Asistido por Computador / Agua / Termografía / Embalaje de Productos / Humedad Idioma: En Revista: Sensors (Basel) Año: 2014 Tipo del documento: Article País de afiliación: Reino Unido