Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends.

Yu, Xinge; Zeng, Li; Zhou, Nanjia; Guo, Peijun; Shi, Fengyuan; Buchholz, Donald B; Ma, Q; Yu, Junsheng; Dravid, Vinayak P; Chang, Robert P H; Bedzyk, Michael; Marks, Tobin J; Facchetti, Antonio

Yu, Xinge; Zeng, Li; Zhou, Nanjia; Guo, Peijun; Shi, Fengyuan; Buchholz, Donald B; Ma, Q; Yu, Junsheng; Dravid, Vinayak P; Chang, Robert P H; Bedzyk, Michael; Marks, Tobin J; Facchetti, Antonio.

Afiliación

Yu X; Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.

Adv Mater ; 27(14): 2390-9, 2015 Apr 08.

Article en En | MEDLINE | ID: mdl-25712894

Palabras clave

flexible materials; indium oxide; polymer blends; thin-film transistors; transparent electronics

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania

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