Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer.

Skinner, T D; Olejník, K; Cunningham, L K; Kurebayashi, H; Campion, R P; Gallagher, B L; Jungwirth, T; Ferguson, A J

Skinner, T D; Olejník, K; Cunningham, L K; Kurebayashi, H; Campion, R P; Gallagher, B L; Jungwirth, T; Ferguson, A J.

Afiliación

Skinner TD; Microelectronics Group, Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE, UK.
Olejník K; Institute of Physics, ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic.
Cunningham LK; Microelectronics Group, Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE, UK.
Kurebayashi H; Microelectronics Group, Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE, UK.
Campion RP; PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan.
Gallagher BL; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
Jungwirth T; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
Ferguson AJ; Institute of Physics, ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic.

Nat Commun ; 6: 6730, 2015 Mar 31.

Article en En | MEDLINE | ID: mdl-25823949

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2015 Tipo del documento: Article País de afiliación: Reino Unido Pais de publicación: Reino Unido

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