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Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties.
Liu, Bilu; Köpf, Marianne; Abbas, Ahmad N; Wang, Xiaomu; Guo, Qiushi; Jia, Yichen; Xia, Fengnian; Weihrich, Richard; Bachhuber, Frederik; Pielnhofer, Florian; Wang, Han; Dhall, Rohan; Cronin, Stephen B; Ge, Mingyuan; Fang, Xin; Nilges, Tom; Zhou, Chongwu.
Afiliación
  • Liu B; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
  • Köpf M; Department of Chemistry, Technische Universität München, Lichtenbergstraße 4, Garching b, München, 485748, Germany.
  • Abbas AN; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
  • Wang X; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Guo Q; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Jia Y; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Xia F; Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
  • Weihrich R; Institut für Anorganische Chemie, Universität Regensburg, Universitätsstraße 31, Regensburg, 93040, Germany.
  • Bachhuber F; Institut für Anorganische Chemie, Universität Regensburg, Universitätsstraße 31, Regensburg, 93040, Germany.
  • Pielnhofer F; Institut für Anorganische Chemie, Universität Regensburg, Universitätsstraße 31, Regensburg, 93040, Germany.
  • Wang H; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
  • Dhall R; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
  • Cronin SB; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
  • Ge M; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
  • Fang X; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
  • Nilges T; Department of Chemistry, Technische Universität München, Lichtenbergstraße 4, Garching b, München, 485748, Germany.
  • Zhou C; Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
Adv Mater ; 27(30): 4423-4429, 2015 Aug.
Article en En | MEDLINE | ID: mdl-26112061
New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Alemania
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Alemania