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High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors.
Torres, Carlos M; Lan, Yann-Wen; Zeng, Caifu; Chen, Jyun-Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R; Lerner, Mitchell B; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong; Wang, Kang L.
Afiliación
  • Torres CM; Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  • Lan YW; Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  • Zeng C; Institute of Physics, Academia Sinica , Taipei 115, Taiwan.
  • Chen JH; Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  • Kou X; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University , Chungli 32023, Taiwan.
  • Navabi A; Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  • Tang J; Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  • Montazeri M; Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  • Adleman JR; Department of Electrical Engineering, University of California at Los Angeles , Los Angeles, California 90095, United States.
  • Lerner MB; Space and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, California 92152, United States.
  • Zhong YL; Space and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, California 92152, United States.
  • Li LJ; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University , Chungli 32023, Taiwan.
  • Chen CD; Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) , Thuwal, 23955-6900, Kingdom of Saudi Arabia.
  • Wang KL; Institute of Physics, Academia Sinica , Taipei 115, Taiwan.
Nano Lett ; 15(12): 7905-12, 2015 Dec 09.
Article en En | MEDLINE | ID: mdl-26524388
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos