Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode.

Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe.

Afiliación

Dong H; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. xubs@tyut.edu.cn and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanx
Sun J; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. xubs@tyut.edu.cn and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanx
Ma S; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. xubs@tyut.edu.cn and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanx
Liang J; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. xubs@tyut.edu.cn and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanx
Lu T; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. xubs@tyut.edu.cn and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanx
Jia Z; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. xubs@tyut.edu.cn and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanx
Liu X; College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China.
Xu B; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. xubs@tyut.edu.cn and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanx

Phys Chem Chem Phys ; 18(9): 6901-12, 2016 Mar 07.

Article en En | MEDLINE | ID: mdl-26879291

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2016 Tipo del documento: Article Pais de publicación: Reino Unido

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