Mobility overestimation due to gated contacts in organic field-effect transistors.

Bittle, Emily G; Basham, James I; Jackson, Thomas N; Jurchescu, Oana D; Gundlach, David J

Bittle, Emily G; Basham, James I; Jackson, Thomas N; Jurchescu, Oana D; Gundlach, David J.

Afiliación

Bittle EG; National Institute of Standards and Technology, Engineering Physics Division, 100 Bureau Drive, MS 8120, Gaithersburg, Maryland 20899, USA.
Basham JI; Department of Physics, Wake Forest University, 1834 Wake Forest Road, Winston-Salem, North Carolina 27109, USA.
Jackson TN; National Institute of Standards and Technology, Engineering Physics Division, 100 Bureau Drive, MS 8120, Gaithersburg, Maryland 20899, USA.
Jurchescu OD; Department of Electrical Engineering, The Pennsylvania State University, 121 Electrical Engineering East, University Park, State College, Pennsylvania 16802, USA.
Gundlach DJ; Department of Electrical Engineering, The Pennsylvania State University, 121 Electrical Engineering East, University Park, State College, Pennsylvania 16802, USA.

Nat Commun ; 7: 10908, 2016 Mar 10.

Article en En | MEDLINE | ID: mdl-26961271

Asunto(s)

Naftacenos/química; Dióxido de Silicio/química; Transistores Electrónicos; Espectroscopía Dieléctrica; Ensayo de Materiales

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Transistores Electrónicos / Dióxido de Silicio / Naftacenos Tipo de estudio: Prognostic_studies Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido

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