Parasitic analysis and &#960;-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations.

Wang, Yong; Goh, Wang Ling; Chai, Kevin T-C; Mu, Xiaojing; Hong, Yan; Kropelnicki, Piotr; Je, Minkyu

Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations.

Wang, Yong; Goh, Wang Ling; Chai, Kevin T-C; Mu, Xiaojing; Hong, Yan; Kropelnicki, Piotr; Je, Minkyu.

Afiliación

Wang Y; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
Goh WL; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
Chai KT; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore.
Mu X; Key Laboratory for Optoelectronic Technology and Systems, Defense Key Disciplines Lab of Novel Micro-Nano Devices and System Technology, International R&D Center of Micro-Nano Systems and New Materials Technology, Chongqing University, Chongqing, China.
Hong Y; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
Kropelnicki P; Excelitas Technologies, Singapore.
Je M; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea.

Rev Sci Instrum ; 87(4): 045004, 2016 04.

Article en En | MEDLINE | ID: mdl-27131699

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Rev Sci Instrum Año: 2016 Tipo del documento: Article País de afiliación: Singapur

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