Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes.
ACS Appl Mater Interfaces
; 8(36): 23963-8, 2016 Sep 14.
Article
en En
| MEDLINE
| ID: mdl-27523723
ABSTRACT
Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and â¼60 nm, respectively, representing an ultrahigh ferroelectric memory density of â¼100 Gbit/inch(2). Moreover, the RS behavior in those nanocapacitors showed a large ON/OFF ratio (above 10(3)) and a long retention time of over 6,000 s. Our results not only demonstrate for the first time that the switchable ferroelectric diode effect could be realized in BFO films down to <10 nm in thickness, but also suggest the great potentials of those nanocapacitors for applications in high-density data storage.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2016
Tipo del documento:
Article
País de afiliación:
China