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Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene.
Campos, Leonardo C; Taychatanapat, Thiti; Serbyn, Maksym; Surakitbovorn, Kawin; Watanabe, Kenji; Taniguchi, Takashi; Abanin, Dmitry A; Jarillo-Herrero, Pablo.
Afiliación
  • Campos LC; Departamento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil.
  • Taychatanapat T; Department of Physics, Faculty of Science, Chulalongkorn University, Patumwan, Bangkok 10330, Thailand.
  • Serbyn M; Department of Physics, University of California, Berkeley, California 94720, USA.
  • Surakitbovorn K; Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
  • Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Taniguchi T; Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Abanin DA; Department of Theoretical Physics, University of Geneva, 1211 Genève 4, Switzerland.
  • Jarillo-Herrero P; Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Phys Rev Lett ; 117(6): 066601, 2016 Aug 05.
Article en En | MEDLINE | ID: mdl-27541472
ABSTRACT
We report on magnetotransport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the 12-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibit a sequence of phase transitions between all integer quantum Hall states in the filling factor interval -8<ν<0. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Phys Rev Lett Año: 2016 Tipo del documento: Article País de afiliación: Brasil

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Phys Rev Lett Año: 2016 Tipo del documento: Article País de afiliación: Brasil